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| 8mm PIN PHOTODIODE Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. MID-A841G Package Dimensions Unit: inches ( mm ) .310 (7.87) .300 (7.62) 1.35 (34.3) MINIMUM .075 (1.91) .070 (1.78) .030 (0.76) 45 R NOM. .218 (5.54) .208 (5.28) ANODE .332 (8.43) .320 (8.13) .200 (5.08) NOM. CATHODE Features l l l l l High photo sensitivity Low junction capacitance High cut-off frequency Fast switching time Acceptance viwe angle : 90 .020 (0.51) DIA. NOM. .377 (9.58) .357 (9.07) Chip Active Area : 0.017 in2 (11mm2) Absolute Maximum Ratings @ TA=25oC Parameter Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating -20 C to + 75 C -20oC to + 75oC 260oC for 5 seconds o o Unit Unity Opto Technology Co., Ltd. 12/06/2000 MID-A841G Optical-Electrical Characteristics Characteristic Sensitivity @ 10-8 To 10-2 W Temperature Coefficient Of Sensitivity @ 880nm Responsivity Open Circuit Voltage Dark Current V=0V, 880nm H = 100 fc, 2850K H = 0, VR = 10V Test Conditions 880nm AXIS Symbol S AXIS TCS Re VOC ID TC ID RSH TC RSH CJ range P H = 0, I = 0.1mA RISE 10 - 90% FALL 90 - 10% 90% OF MAX 70% OF MAX 50% OF MAX VBR tr tf Min. 0.17 0.13 400 13 30 35 Type . 0.25 0.18 0.33 3 +11 67 -11 85 925 150 60 60 18 35 45 Max. 0.28 0.2 0.25 30 1100 26 40 50 @ TA=25oC Unit A/W %/oC A W/cm2 V nA %/oC M %/oC pF nm nm V nS Dark Current Temperature Coefficient H = 0 Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response-Peak Breakdown Voltage Response Time =940nm RL=10K OHMS I=2A Angular Response H = 0, VF = 10mV H = 0, VF = 10mV H = 0, V = 0V, Freq=1MHZ DEG Unity Opto Technology Co., Ltd. 12/6/2000 |
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